SF24C64 Ferroelectric Random Access Memory (FRAM)
■The SF24C64 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
■Unlike SRAM, SF24C64 is able to retain data without using a data backup battery.
■The SF24C64 does not need a polling sequence after writing to the memory such as the case of Flash memory or E2PROM.
●Features
■Capacity: 8,192 words × 8bit
■Interface type: I²C Interface
■Operating voltage: 1.7 V to 5.5 V
■Operating frequency: 1MHz
■Operating current: 0.5mA (typical @1 MHz)
■Standby current: 1μA (typical condition)
■Endurance: 6E8 times / byte (typical condition)
■Data retention: 10 years @ 85℃ (>200 years @ 25℃)
■Operation ambient temperature range: -40℃ to 85℃
■Package: 8-pin plastic SOP RoHS compliant
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Ferroelectric Random Access Memory 、 FRAM 、 FRAM chip 、 Ferroelectric Random Access Memory chip |
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Datasheet |
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Please see the document for details |
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SOP |
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English Chinese Chinese and English Japanese |
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2024/3/1 |
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V1.0 |
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1.5 MB |
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