Good-Ark Semiconductor GSFA20106 200V, 106 A, 9.4mΩ N-C hannel MOSFET with Ultra-low R DS(ON) and Qgd in TO-247 Package

PublishTime：2024-07-25

●Good-Ark Semiconductor introduces GSFA20106, a 200V,106A, 9.4mΩ, N-Channel MOSFET with ultra-low RDS(ON) and Qgd ideal for uni-directional high frequency switching applications. The GSFA20106 utilizes the latest deep trench technologies and advance process techniques to achieve excellent RDS(ON), lower gate charge, and a high repetitive avalanche rating. Packaged in the TO-247 package, this device is suitable for DC-DC converters, BMS, Micro-inverters, on board power for servers, motor control and high-power density point of load.
●BENEFITS
■Low gate-charge
■Best-in-class on-resistance (9.4mΩ Typ.)
■High power density and efficiency
■Low switching and drive losses
■Low reverse recovery charge
●BENEFITS
■Reduces overshoot
■Reduces the number of MOSFETs in parallel
■Increases system reliability while achieving cost-saving
■Energy efficient

Brand of Product：	Good-Ark
Part#：	GSFA20106 More Part#
Product Category：	N-C hannel MOSFET More
Application：	[ DC-DC conversion ][ BMS ][ Servers ][ Power tools ][ Class-D audios ][ Motor controls ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-247
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2024/2/23
Version Number：
Data Encoding：
Data Size：	564 KB

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