HSSR-S1A04h-2 光MOS 固态继电器产品规格书(HSSR-S1A04h-2 Photo MOSFET Solid State Relay SPECIFICATION)

2024-07-19
●概述General
■产品HSSR-S1A04h-2 由砷化铝镓红外发光二极管作为输入级耦合到高电压输出光探测电路。光探测电路由高速光电二极管阵列和驱动电路构成, 用以开启/关断两个独立的高压金属氧化物半导体场效应管(MOSFET)。一 个最小5mA 的电流流经输入级红外发光二级管可确保继电器动作。当加在输入级红外发光二级管的正向压降为0.8V 或更小值时,继电器可确保复位。 产品见图1。 The HSSR-S1A04h-2 consists of a AlGaAs infrared emitting diode input stage optically coupled to a high-voltage output detector circuit. The detector consists of a high-speed photovoltaic diode array and driver circuitry to switch on/off two discrete high voltage MOSFETs. The relay action with a minimum input current of 5mA through the input LED. The relay reset with an input voltage of 0.8V or less. Products shown in Figure 1.
●特点Features
■产品符合UL,VDE,CQC 安规认证。Products comply with UL,VDE,CQC safety certification.
■产品通过AEC-Q101 测试认证。Products has passed AEC-Q101 test certification.
■微型光MOS 固态继电器。Micro Photo MOSFET Solid State Relay.
■单通道常开型单刀单掷继电器。Single Channel Normally On Single-Pole-Single-Throw (SPST) Relay.
■600V 输出耐压产品。600V Output Withstand Voltage.
■50mA 额定电流产品。50mA Current Rating.
■低输入电流,CMOS 兼容。Low Input Current: CMOS Compatibility.
■非常快的开关速度:典型值0.5ms (Ton), 0.2ms (Toff )。 High Speed Switching: 0.5ms (Ton), 0.2ms (Toff ) Typical
■高输入输出绝缘耐压:3750 Vrms for 1 min。 High Input-to-Output Insulation Voltage: 3750 Vrms for 1 min.
■产品符合UL/cUL、VDE、CQC 安规认证。The products comply with UL,VDE,CQC safety certification. UL/cUL 证书编号: E178703: VDE 证书编号: 40004708: CQC 证书编号:CQC22001340049 UL /cUL Certificate No. E178703: VED Certificate No. 40004708: CQC Certifcate No.CQC22001340049

Hualian Electronics

HSSR-S1A04h-2

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光MOS 固态继电器Photo MOSFET Solid State Relay

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2023-11-07

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