GPT030N10NTH 100V N-Channel MOSFET
■Split Gate Trench Technology
■Low RDS(ON)
■Low Gate Charge
■Low Gate Resistance
■100% UIS Tested
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Datasheet |
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Please see the document for details |
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TO-263-2L |
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English Chinese Chinese and English Japanese |
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2024/6/11 |
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Rev – 3.0 |
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998 KB |
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