IS41LV16100D 1Mx16 16Mb DRAM WITH EDO PAGE MODE
●DESCRIPTION
■The ISSI IS41LV16100D is a 1,048,576 x 16-bit high- performance CMOS Dynamic Random Access Memories.
■These devices offer a cycle access called Extended Data Out (EDO) Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 30 ns per 16-bit word. It is asynchronous, as it does not require a clock signal input to synchronize commands and I/O.
■These features make the IS41LV16100D ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications that run without a clock to synchronize with the DRAM.
■The IS41LV16100D is packaged in a 400-mil 50/44 pin TSOP (Type II).
●FEATURES
■TTL compatible inputs and outputs; tristate I/O
■Refresh Interval:
▲Auto refresh Mode: 1,024 cycles /16 ms
▲RAS-Only, CAS-before-RAS (CBR), and Hidden
▲Self refresh Mode: 1,024 cycles /128 ms
■JEDEC standard pinout
■Single power supply:
▲3.3V ± 10%
■Byte Write and Byte Read operation via two CAS
■Industrial Temperature Range: -40℃ to +85℃
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DRAM 、 high- performance CMOS Dynamic Random Access Memories. 、 CMOS DRAM |
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Datasheet |
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Please see the document for details |
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TSOP |
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English Chinese Chinese and English Japanese |
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03/04/2020 |
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Rev. B |
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410 KB |
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