DIF120SIC053 Silicon Carbide (SiC) MOSFET
●SiC Wide Bandgap Material
●Large clearance and creepage
●Kelvin source for fast switching and reduced noise level at Gate
●Low on state resistance
●Fast switching times
●Low gate charge
●Compliant to RoHS (examp. 7a), REACH, Conflict Minerals
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Datasheet |
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Please see the document for details |
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TO-247-4L |
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English Chinese Chinese and English Japanese |
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2024-05-07 |
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Version 2024-05-07 |
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477 KB |
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