AGP40T120D
●General Description :
■This IGBT is produced using advanced’s Field Stop Trench IGBT Technology,which provides low VCE(sat),high switching performance and excellent quality.
●Features
■High Speed Switching &Low Power Loss
■VCE(sat)=1.9V@IC=40A、
■High Input Impedance
■Ultra-Soft,fast recovery anti-parallel diode
■Ultra-narrowed VF distribution control
■Positive Temperature coefficient for easy paralleling
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Datasheet |
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Please see the document for details |
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TO-247 |
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English Chinese Chinese and English Japanese |
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2023/5/10 |
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VER2.6 |
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1.3 MB |
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