CSP065N10GL-P.B
●CSP065N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications.
■FEATURES:
●Fast Switching
●Low On-Resistance
●Low Gate Charge
●Low Reverse transfer capacitances
●High avalanche ruggedness
●RoHS product
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
TO-220;TO-263 |
|
|
English Chinese Chinese and English Japanese |
|
|
2024/2/26 |
|
|
Ver1.1 |
|
|
|
|
|
1.3 MB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
