2N7002KW N-Channel Enhancement Mode MOSFET
■The 2N7002KW uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
●General Features
■VDS = 60V ID =0.115 A
■RDS(ON) < 3 Ω@ VGS=10 V
■ESD Rating：HBM≥2000V
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[ Battery protection ][ Load switch ][ Uninterruptible power supply ][ Switching application ] |
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Datasheet |
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Please see the document for details |
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SOT-323 |
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English Chinese Chinese and English Japanese |
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2023/8/11 |
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776 KB |
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