AS35N10S N-Channel Enhancement Mode MOSFET

2024-04-19
●Feature ■High density cell design for ultra low Rdson ■ Extremely low switching loss ■ Excellent stability and uniformit ■ Fast switching and soft recovery

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AS35N10S

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N-Channel Enhancement Mode MOSFET

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Consumer electronic power supply ]Isolated DC/DC convertor ]Invertors ]

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Datasheet

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Please see the document for details

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DFN3.3X3.3-8L

English Chinese Chinese and English Japanese

2020/03/06

Revision E

AS-3150214

1 MB

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