SW20N65M N-channel Enhanced mode TO-220F MOSFET
■This power MOSFET is produced with advanced technology of SAMWIN.
■This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
●Features
■High ruggedness
■Low RDS(ON) (Typ 0.32Ω)@VGS=10V
■Low Gate Charge (Typ 77nC)
■Improved dv/dt Capability
■100% Avalanche Tested
■Application: LED, Charger, PC Power
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Datasheet |
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Please see the document for details |
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TO-220F |
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English Chinese Chinese and English Japanese |
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Mar. 2023 |
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Rev. 0.5 |
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958 KB |
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