HSSR-DA08-× 光 MOS 固态继电器产品规格书 (HSSR-DA08-× Photo MOSFET Solid State Relay SPECIFICATION)
●概述
■产品 HSSR-DA08-×由砷化铝镓红外发光二极管作为输入级耦合到高电压输出光探测电路。光探测电路由高速光电二极管阵列和驱动电路构成，用以开启/关断两个独立的高压金属氧化物半导体场效应管(MOSFET)。一个最小 5mA 的电流流经输入级红外发光二级管可确保继电器动作。当加在输入级红外发光二级管的正向压降为 0.8V 或更小值时，继电器可确保复位。
●特点
■双通道常开型单刀单掷继电器。
■60V 输出耐压产品。
■1300mA 额定电流产品。
■低输入电流，CMOS 兼容。
■0.2Ω低通态电阻。
■非常高的断开阻抗：典型值 10 兆欧。
■非常快的开关速度：典型值 0.5ms (Ton), 0.2ms (Toff )。
■高输入输出绝缘耐压：5000 Vrms for 1 min。
●General
■The HSSR-DA08-× consists of a AlGaAs infrared emitting diode input stage optically coupled to a high-voltage output detector circuit. The detector consists of a high-speed photovoltaic diode array and driver circuitry to switch on/off two discrete high voltage MOSFETs. The relay action with a minimum input current of 5mA through the input LED. The relay reset with an input voltage of 0.8V or less.
●Features
■Dual Channel Normally on Single-Pole-Single-Throw (SPST) Relay.
■0V Output Withstand Voltage.
■1300mA Current Rating.
■Low Input Current: CMOS Compatibility.
■0.2Ω Low On-Resistance.
■Very High Output Off -state Impedance: 10 Teraohms Typical.
■High Speed Switching: 0.5ms (Ton), 0.2ms (Toff ) Typical
■High Input-to-Output Insulation Voltage: 5000 Vrms for 1 min.
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2019-09-15 |
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Ver.1.0 |
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719 KB |
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