HC2M0160120K SiC Power MOSFET N-Channel Enhancement Mode

PublishTime：2024-03-13

●Features ■3rd generation SiC MOSFET technology ■Optimized package with separate driver source pin ■High blocking voltage with low on-resistance ■High-speed switching with low capacitances ■Fast intrinsic diode with low reverse recovery (Q rr ) ■Halogen free, RoHS compliant ●Benefits ■Reduce switching losses and minimize gate ringing ■Higher system efficiency ■Reduce cooling requirements ■Increase power density ■Increase system switching frequency

Brand of Product：	HUA XUAN YANG ELECTRONIC
Part#：	HC2M0160120K More Part#
Product Category：	SiC Power MOSFET More
Application：	[ Motor Control ][ EV Battery Chargers ][ High Voltage DC/DC Converters ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO247-4L
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2024/1/4
Version Number：
Data Encoding：
Data Size：	1.1 MB

Download

+1 Like
Add to Favorites

Recommend

New Products

More>

Technical Resources

More>

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Integrated Circuits