BRCS120N06YBQ DATA SHEET
■PDFN3×3A-8L 塑封封装 N 沟道 MOS 场效应管。
■N-Channel Enhancement Mode Field Effect Transistor in a PDFN3×3A-8L Plastic Package.
●特征 / Features
■VDS (V) = 60V
■ID =24 A (VGS = ±20V)
■R DS(ON)@10V≤13mR(Typ.11.5mR)
■符合 AEC-Q101 标准高可靠性要求,无卤产品。Qualified to AEC-Q101 Standards for High Reliability,HF Product.
N 沟道 MOS 场效应管 、 N-Channel Enhancement Mode Field Effect Transistor |
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[ 功率开关 ][ 汽车应用 ][ high efficiency switching DC/DC converters ][ switch mode power supplies ][ automotive applications ] |
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Datasheet |
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Please see the document for details |
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PDFN3×3A-8L |
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English Chinese Chinese and English Japanese |
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Jul.-2022 |
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Rev.A |
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872 KB |
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