UN301P23T P-Channel Enhancement Mode MOSFET
■VDS -30V
■ID -4.2A
■RDS(ON) (@VGS=-10V ID=-2A)≤60mΩ
■RDS(ON) (@VGS=-4.5V ID=-2A)≤70mΩ
●Features
■Advanced trench cell design
■Low Thermal Resistance
■Low Gate Charge
■Halogen-Free & Lead-Free
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[ Load Switch ][ Portable Devices ][ Voltage controlled small signal switch ] |
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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March 1,2022 |
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Revision March 1,2022 |
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7.4 MB |
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