SL160N03R N-Channel Enhancement Mode Power MOSFET
■This Power MOSFET is produced using advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
●Features
■VDS=30V，ID=160A
■RDS（ON）TYP = 1.5mΩ @VGS =10V
■RDS（ON）TYP = 2.2mΩ @VGS =4.5V
■Very Low On-resistance RDS(ON)
■LowCrss
■Fast switching
■100% avalanche tested
■Improved dv/dt capability
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[ Load Switch ][ Power Management ] |
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Datasheet |
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Please see the document for details |
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PDFN5*6-8L;PDFN5*6 |
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English Chinese Chinese and English Japanese |
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2023/4/20 |
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1.4 MB |
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