M1216 P-Channel Power MOSFET DFNWB2×2-6L Plastic-Encapsulate MOSFETS

2024-01-05
●DESCRIPTION ■The M1216 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage. This device is suitable for use as a load switching application and a wide variety of other applications. ●FEATURES ■Advanced trench MOSFET process technology ■Ultra low on-resistance with low gate charge

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M1216

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Part#

P-Channel Power MOSFETPlastic-Encapsulate MOSFETS

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PWM application ]Load switch ]Battery charge ]cellular handset ]

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Datasheet

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Please see the document for details

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DFNWB

English Chinese Chinese and English Japanese

2023/10/20

1.3 MB

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