IXBF42N300 High Voltage, BiMOSFET™ Monolithic Bipolar MOS Transistor

2023-12-27
●Features
■Silicon Chip on Direct-Copper Bond (DCB) Substrate
■Isolated Mounting Surface
■3000V~ Electrical Isolation
■High Blocking Voltage
■High Peak Current Capability
■Low Saturation Voltage
■FBSOA Rated
■SCSOA Rated
●Advantages
■Low Gate Drive Requirement
■High Power Density
●Applications
■Laser Generators
■Capacitor Discharge Circuits
■AC Switches
■Protection Circuits

IXYS

IXBF42N300

More

Part#

High Voltage, BiMOSFET™Monolithic Bipolar MOS Transistor

More

Laser Generators ]Capacitor Discharge Circuits ]AC Switches ]Protection Circuits ]

More

Datasheet

More

More

Please see the document for details

More

More

ISOPLUS i4-Pak™

English Chinese Chinese and English Japanese

10/23

DS100325C

1.7 MB

- The full preview is over. If you want to read the whole 7 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: