VS-HFA08TB120S-M3 Vishay Semiconductors HEXFRED®, Ultrafast Soft Recovery Diode, 8 A
●FEATURES
■Ultrafast and ultrasoft recovery
■Very low I-RRM and Q-rr
■Specified at operating conditions
■ Meets MSL level 1, per J-STD-020,LF maximum peak of 245 °C
●VS-HFA08TB120S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 8 A continuous current, the VS-HFA08TB120S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (I-RRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA08TB120S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
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[ power supplies ][ power conversion systems ][ inverters ][ motor drives ] |
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Datasheet |
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Please see the document for details |
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TO-263AB |
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English Chinese Chinese and English Japanese |
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27-Oct-17 |
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Revision: 27-Oct-17 |
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96218 |
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340 KB |
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