AT130N10S N-Channel Enhancement Mode Power MOSFET
■High density cell design for ultra low Rdson
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high EAS
■Excellent package for good heat dissipation
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[ Power switching application ][ Hard switched circuits ][ high frequency circuits ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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TO-220AB |
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English Chinese Chinese and English Japanese |
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2003/03/08 |
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Revision D |
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AS-3150241 |
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1.5 MB |
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