BSC070N10NS3G N-SGT Enhancement Mode MOSFET
■The BSCO70N10NS3G use advanced SGT MOSFET technology to provide low RDS(ON),low gate charge,fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in
●General Features
■VDS =100V ID =75 A
■RDS(ON) < 9.2mΩ@ VGS=10V
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N-SGT Enhancement Mode MOSFET 、 SGT MOSFET 、 N-Channel MOSFET |
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Datasheet |
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Please see the document for details |
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DFN5X6-8L |
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English Chinese Chinese and English Japanese |
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2023/8/17 |
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645 KB |
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