IV1Q06040T4 – 650V 40mΩ SiC MOSFET

2023-10-16
■Features
●High blocking voltage with low on-resistance
●High speed switching with low capacitance
●High operating junction temperature capability
●Very fast and robust intrinsic body diode
●Kelvin gate input easing driver circuit design

INVENTCHIP

IV1Q06040T4

More

Part#

SiC MOSFET

More

EV chargers ]Server PSU ]Telecom PSU ]Solar inverters ]UPS ]High voltage DC/DC converters ]Switch mode power supplies ]

More

Datasheet

More

More

Please see the document for details

More

More

TO247-4

English Chinese Chinese and English Japanese

Oct. 2021

Rev1.0

1.8 MB

  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: