2SK3018 N-Channel Enhancement Mode MOSFET
■The 2SK3018 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
●General Features
■VDS = 30V ID =0.1A
■RDS(ON) < 2.2Ω@ VGS=10V
■ESD Rating：HBM≥2000V
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[ Load switch ][ Switching application ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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2022/12/12 |
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3.2 MB |
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