CS100N06 A4 Silicon N-Channel Power MOSFET

2023-10-09
●CS100N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252, which accords with the RoHS standard.
●Features:
■Fast Switching
■Low ON Resistance
■Low Gate Charge
■Low Reverse transfer capacitances
■100% Single Pulse avalanche energy Test
●Applications:
■Power switch circuit of adaptor and charger.

CR Micro

CS100N06 A4

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Part#

Silicon N-Channel Power MOSFETsilicon N-channel Enhanced VDMOSFETs

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Power switch circuit ]

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Datasheet

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Please see the document for details

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TO-252

English Chinese Chinese and English Japanese

2021/2/8

2021V01

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