BM3G015MUV-LB 650 V GaN HEMT Power Stage Datasheet
●This is the product guarantees long time support in industrial market.
●BM3G015MUV-LB provides an optimum solution for all electronics systems that requires high power density and efficiency.
●By integrating the 650 V enhancement GaN HEMT and silicon driver to ROHM’s original package, parasitic inductance caused by a PCB and wire bonding is reduced significantly compared to traditional discrete solutions.
●Owing to this, a high switching slew rate up to 150 V/ns can be achieved. On the other hand, adjustable gate drive strength contributes to low EMI, and various protections and other additional functions provide optimized cost, PCB size.
●This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.
■Features:
●Nano Cap™ Integrated Output Selectable 5 V LDO
●Long Time Support Product for Industrial Applications
●Wide Operating Range for VDD Pin Voltage
●Wide Operating Range for IN Pin Voltage
●Low VDD Quiescent and Operating Current
●Low Propagation Delay
●High dv/dt Immunity
●Adjustable Gate Drive Strength
●Power Good Signal Output
●VDD UVLO Protection
●Thermal Shutdown Protection
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[ Industrial Equipment ][ Power Supplies ][ Totem-pole PFC ][ LLC Power Supply ][ Adaptor ][ industrial market ] |
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Datasheet |
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Please see the document for details |
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VQFN046V8080 |
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English Chinese Chinese and English Japanese |
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13.Jan.2023 |
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Rev.001 |
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TSZ02201-0F1F0A100090-1-2 |
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2.3 MB |
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