G50T65D 50A 650V Trenchstop Insulated Gate Bipolar Transistor
■Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
●Features
■FS Trench Technology, Positive temperature coefficient
■ Low saturation voltage: VCE(sat), typ = 2.0V @ IC =50A and Tj =25°C
■ Extremely enhanced avalanche capability
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[ Welding ][ UPS ][ Three-level Inverter ] |
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Datasheet |
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Please see the document for details |
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TO-3PN |
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English Chinese Chinese and English Japanese |
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2022.11.02 |
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Rev. 1.0 |
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852 KB |
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