SOPLUS™- Isolated Discrete Power Semiconductors Application Note
■When using power semiconductors, there is usually a need to electrically isolate the devices from the heatsink, which could also be the equipment's chassis or housing. The main reasons for this are safety, the necessity to reduce electromagnetic interference by reducing stray capacitance between the chip and ground, and the desire to mount several devices onto the same heatsink.
■Major penalties involve increased thermal resistances, complex assembly, and difficulty in testing of the insulation quality to meet different global safety standards. The most common method is to use an insulating material, sandwiched between the semiconductor device and the heatsink. Inherently, this increases the thermal resistance case-to-heatsink Rthcs.
■Implementing discrete power semiconductors by adapting technologies from power modules led to the development of the ISOPLUS™ family. Here, a combination of insulating carriers with copper lead-frames and bond-wire interconnection enables an internal construction that achieves high insulation strength without sacrificing thermal performance.
■This application note describes the major properties for the ISOPLUS™ Family.
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Isolated Discrete Power Semiconductors 、 power semiconductors |
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[ Industrial drives ][ EV-charging ][ White Goods ][ Power Supplies ][ Renewable energies ] |
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Application note & Design Guide |
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Please see the document for details |
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PLUS247;ISOPLUS-SMPD™-Y;ISOPLUS-SMPD™-X;ISOPLUS-SMPD™-B;ISOPLUS-DIL™;ISOPLUS 14-PAC™;ISOPLUS264™;ISOPLUS247™;ISOPLUS220™;ISOPLUS;SOPLUS™;SMPD-DIL;TO-220;TO-247;14-Pac;SMPD-B;SMPD |
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English Chinese Chinese and English Japanese |
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21.09 |
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Rev 21.09a |
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1.6 MB |
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