B2D08065KS SiC Schottky Diode
■Ceramic package provides 2.5kV isolation
■Extremely low reverse current
■No reverse recovery current
■Temperature independent switching
■Positive temperature coefficient on VF
■Excellent surge current capability
■Low capacitive charge
●Benefits
■Electrically isolated package
■Essentially no switching losses
■System efficiency improvement over Si diodes
■Increased power density
■Enabling higher switching frequency
■Reduction of heat sink requirements
■System cost savings due to smaller magnetics
■Reduced EMI
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[ Switch mode power supplies ][ SMPS ][ Uninterruptible power supplies ][ Motor drivers ][ Power factor correction ] |
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Datasheet |
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Please see the document for details |
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TO-220 |
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English Chinese Chinese and English Japanese |
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2021-01-26 |
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Rev. 0.1 |
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876 KB |
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