LSIC2SD065A10A 650 V, 10 A SiC Schottky Barrier Diode
■This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
●Features
■AEC-Q101 qualified
■Positive temperature coefficient for safe operatior and ease of paralleling
■175 °C maximum operating junction tempe ature
■Excellent surge capability
■Extremely fast, temperature-independent switching behavior
■Dramatically reduced switching losses compared to Si bipolar diodes
■RoHS compliant, lead-free, and halogen-free
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SiC Schottky Barrier Diode 、 Silicon Carbide Schottky Diode 、 silicon carbide (SiC) Schottky diodes 、 Boost diodes |
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[ Switch-mode power supplies ][ Solar inverters ][ Uninterruptable power supplies ][ Industrial motor drives ][ Battery Chargers ][ High-speed Rectifier ] |
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Datasheet |
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Please see the document for details |
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TO-220-2L |
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English Chinese Chinese and English Japanese |
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7/9/2021 |
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1.4 MB |
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