AP2302N3 N-Channel Enhancement Mosfet
■20V,2.3A
▲RDS（ON）<58mΩ＠VGS=4.5V TYP:46mΩ
▲RDS（ON）<86mΩ＠VGS=2.5V TYP:65mΩ
■ Advanced trench cell design
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[ Load Switch ][ Portable Devices ][ DC/DC Converter ] |
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Datasheet |
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Please see the document for details |
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SOT323;SOT-323 |
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English Chinese Chinese and English Japanese |
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2023/02/18 |
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V1.0 |
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918 KB |
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