GSFD2N65 650V N-Channel MOSFET
■ The GSFD2N65 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supplies and a wide variety of other applications.
●Features and Benefits
■Advanced MOSFET process technology
■Ideal for high efficiency switched mode power supplies
■Low on-resistance with low gate charge
■Fast switching and reverse body recovery
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Please see the document for details |
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TO-252;DPAK |
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English Chinese Chinese and English Japanese |
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Feb.2023 |
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USGSFD2N65xSN2.0 |
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913 KB |
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