2SB624 Silicon Epitaxial Planar Transistor
■High DC current gain.hFE: 200TYP (V CE=-1.0V,I C=-100mA)
■Complimentary to the 2SD596.
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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20170701 |
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Revision:20170701 |
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1.1 MB |
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