LGE3D20120H Silicon Carbide Schottky Diode

2023-07-21
●General Description
■This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required.
●Features
■Zero Forward/Reverse Recovery Current
■High Blocking Voltage
■High Frequency Operation
■Positive Temperature Coefficient on VF
■Temperature Independent Switching Behavior
■High surge current capability

LGE

LGE3D20120H

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Part#

Silicon Carbide Schottky Diode

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Datasheet

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Please see the document for details

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TO-247-2L;TO-247

English Chinese Chinese and English Japanese

20170701

Revision:20170701

1.3 MB

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