LGE3D20120H Silicon Carbide Schottky Diode
■This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required.
●Features
■Zero Forward/Reverse Recovery Current
■High Blocking Voltage
■High Frequency Operation
■Positive Temperature Coefficient on VF
■Temperature Independent Switching Behavior
■High surge current capability
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Datasheet |
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Please see the document for details |
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TO-247-2L;TO-247 |
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English Chinese Chinese and English Japanese |
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20170701 |
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Revision:20170701 |
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1.3 MB |
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