Development Board EPC90150 Quick Start Guide:200 V Half-bridge with Gate Drive, Using EPC2307
■The EPC90150 is a half bridge development board with onboard gate driver, featuring the 200 V rated EPC2307 eGaN® field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2307 by including all the critical components on a single board that can be easily integrated into most existing converter topologies.
■The EPC90150 development board measures 2” x 2” and contains two EPC2307 eGaN FETs in a half bridge configuration. The EPC90150 features the Onsemi NCP51820AMNTWG gate driver. The board contains all critical components, and the layout supports optimal switching performance.
■There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A block diagram of the circuit is given in figure 1.
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Development Board 、 half bridge development board 、 eGaN® field effect transistor 、 eGaN® FET 、 eGaN FETs 、 eGaN®FETs |
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User's Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2023/3/17 |
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Revision 1.0 |
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2.9 MB |
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