UT136N03 136A, 30V N-CHANNEL ENHANCEMENT MODE

2023-06-07
●DESCRIPTION
■The UT136N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
●FEATURES
■RDS(ON) ≤ 3.0 mΩ @ VGS=10V, ID=40A
▲RDS(ON) ≤ 4.0 mΩ @ VGS=4.5V, ID=40A

UTC

UT136N03UT136N03L-TA3-RUT136N03L-TQ2-TUT136N03L-TQ2-RUT136N03G-TA3-TUT136N03G-TQ2-TUT136N03G-TQ2-R

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Part#

Power MOSFETN-CHANNEL ENHANCEMENT MODE

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Datasheet

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Please see the document for details

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TO-220;TO-263

English Chinese Chinese and English Japanese

2022/6/30

QW-R502-459.b

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