F2N60 2.0A,600V N-CHANNEL POWER MOSFET
■The UTC F2N60 is a N-Channel enhancement mode silicon
gate power MOSFET with Fast Body Diode, is designed high
voltage, high speed power switching applications such, is designed
to have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient AC to DC converters and bridge circuits.
●FEATURES
■RDS(ON)≤5.0 Ω @ VGS=10V, ID=1.0A
■Fast body diode MOSFET technology
■Ultra Low gate charge (typical 16nC)
■Fast switching capability
■Avalanche energy specified
■Improved dv/dt capability, high ruggedness
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F2N60 、 F2N60L-TN3-T 、 F2N60G-TN3-T 、 F2N60L-TN3-R 、 F2N60G-TN3-R |
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Power MOSFET 、 N-CHANNEL POWER MOSFET 、 N-Channel enhancement mode silicon gate power MOSFET |
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[ power supplies ][ PWM motor controls ][ high efficient AC to DC converters ][ bridge circuits ] |
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Datasheet |
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Please see the document for details |
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TO-252 |
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English Chinese Chinese and English Japanese |
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2021/10/6 |
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QW-R502-952.B |
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399 KB |
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