LSH20N135F1 A Insulate Gate Bipolar Transistor RoHS (SGS) Test Report (CANEC2301128315)

PublishTime：2023-05-18

●Client Name: LE SHAN SHARE ELECTRONIC CO, LTD
●Sample Name: Insulate Gate Bipolar Transistor
●Model No.: LSH20N135F1 A
●Test Requested
■EU RoHS Directive (EU) 2015/863 amending Annex II to Directive 2011/65/EU-Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBBs), Polybrominated diphenyl ethers (PBDEs), Bis(2-ethylhexyl) phthalate (DEHP), Butyl benzyl phthalate (BBP), Dibutyl phthalate (DBP) and Diisobutyl phthalate (DIBP). (PASS)
■EU RoHS Directive (EU) 2015/863 amending Annex II to Directive 2011/65/EU-Lead, Mercury, Cadmium and Hexavalent chromium. (PASS)

Brand of Product：	SHEIER
Part#：	LSH20N135F1 A More Part#
Product Category：	Insulate Gate Bipolar Transistor More
Application：	More
Data Type：	Test Report More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	10 Feb 2023
Version Number：
Data Encoding：	CANEC2301128315
Data Size：	1.2 MB

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