512M (32M x 16) Low Power SDRAM AS4C32M16MSB 54ball FBGA PACKAGE
■The AS4C32M16MSB is high-performance CMOS Dynamic RAMs (DRAM) organized as 32M x 16. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high-performance memory system applications.
●FEATURES
■Power supply
▲VDD/VDDQ = 1.7~1.95V
■ Data width: x16
■ Clock rate: 166MHz
■Partial Array Self-Refresh(PASR)
■ Auto Temperature Compensated Self-Refresh(ATCSR)
■ Power Down Mode
■Deep Power Down Mode (DPD Mode)
■ Programmable output buffer driver strength
■ Four internal banks for concurrent operation
■ Clock Stop capability during idle periods
■ Auto Pre-charge option for each burst access
■ Burst Read Single-bit write operation.
■ CAS Latency: 2 and 3
■Burst Length: 1,2,4,8 and Full Page
■ Burst Type: Sequential or Interleave
■ 64ms Refresh period
■ Interface: LVCMOS
■ Operating Temperature Range
▲Industrial (-40°C to + 85 °C)
|
512M (32M x 16) Low Power SDRAM 、 high-performance CMOS Dynamic RAMs (DRAM) |
|
|
[ high bandwidth memory system applications ][ high-performance memory system applications ] |
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
FBGA;BGA |
|
|
English Chinese Chinese and English Japanese |
|
|
Mar. 2023 |
|
|
Rev 1.0 |
|
|
|
|
|
3.2 MB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
