Metal Oxide Semiconductor Field Effect Transistor RoHS TEST REPORT(C202303061998-3E)

PublishTime：2023-04-19

●The following sample information was submitted and identified by/on the behalf of the client
●Name: Metal Oxide Semiconductor Field Effect Transistor
●Sample State: Normal
●Test Request:
■As specified by client, to determine the Lead(Pb), Cadmium(Cd),Mercury(Hg), Hexavalent Chromium [Cr(VI)], Polybrominated biphenyls (PBBs),Polybrominated diphenyl ethers (PBDEs), Bis(2-ethylhexyl) phthalate (DEHP),Butyl benzyl phthalate (BBP), Dibutyl phthalate (DBP), Diisobutyl phthalate (DIBP) content in the submitted sample(s).
■Halogen
●Judge Standard:
■RoHS Directive (EU) 2015/863 amending Annex II to Directive 2011/65/EU.
■EN 61249-2-21:2003
●Conclusion:
■Based on the performed test on submitted sample, the result(s) comply with the limits as set by RoHS Directive (EU) 2015/863 amending Annex II to Directive 2011/65/EU.
■Based on the performed test on submitted sample, the result(s) comply with the limits as set by EN 61249-2-21:2003.

Brand of Product：	YINT
Part#：
Product Category：	Metal Oxide Semiconductor Field Effect Transistor More
Application：	More
Data Type：	Test Report More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	Mar.13,2023
Version Number：
Data Encoding：	C202303061998-3E
Data Size：	1.2 MB

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