2SC3356RWT1G，S-2SC3356RWT1G High Frequency Amplifier Transistor
■The 2SC3356RWT1G is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
■It has dynamic range and good current characteristic.
■S-Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
●FEATURES
■Low Noise and High Gain
◆NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
■High Power Gain
◆MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
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S-2SC3356RWT1G 、 2SC3356RWT1G 、 2SC3356RWT3G 、 S-2SC3356RWT3G |
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High Frequency Amplifier Transistor 、 NPN silicon epitaxial transistor |
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[ Automotive ][ low noise amplifier ] |
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Datasheet |
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Please see the document for details |
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SC-70 |
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English Chinese Chinese and English Japanese |
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2020/11/25 |
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272 KB |
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