ISL70040SEHEV3Z

PublishTime：2023-03-28

●The ISL70040SEHEV3Z evaluation platform is designed to evaluate the ISL70040SEH alongside the ISL70024SEH. The same board can be used to evaluate the ISL73040SEH alongside the ISL73024SEH, which are the same die offered with different radiation assurance screening. The ISL70040SEH is designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost-type configurations. It operates across a supply range of 4.5V to 13.2V and offers both non-inverting and inverting inputs to satisfy non-inverting and inverting gate drives within a single device. The ISL70040SEH has a 4.5V gate drive voltage (V DRV ) that is generated using an internal regulator which prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage also features an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB), and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The inputs of the ISL70040SEH can withstand voltages up to 14.7V regardless of the VDD voltage. This allows the inputs of the ISL70040SEH to be connected directly to most PWM controllers. The split outputs of the ISL70040SEH offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance the turn-on/off paths.
●The ISL70024SEH is a 200V N-channel enhancement mode GaN power transistor. GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR . The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size.
●Key Features
■Wide VDD range single
▲4.5V to 13.2V
■Location provided for load resistors to switch the GaN FET with a load
■SMA connector on the gate drive voltage to analyze the gate waveforms
■Drain/Source sense test points to analyze the drain to source waveforms
■Banana jack connectors for power supplies and drain/source connections

Brand of Product：	Renesas
Part#：	ISL70040SEHEV3Z 、 ISL70040SEH 、 ISL70024SEH 、 ISL73040SEH 、 ISL73024SEH More Part#
Product Category：	Evaluation Board 、 evaluation platform 、 ingle channel high speed enhanced mode GaN FET 、 N-channel enhancement mode GaN power transistor More
Application：	[ isolated power supplies ][ Synchronous Rectifier (SR) applications ] More
Data Type：	Evaluation Board User's Manual More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	Jan 9, 2023
Version Number：	Rev.1.00
Data Encoding：	UG146
Data Size：	1.3 MB

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