GaN Power Semiconductor Device Dynamic Characterization
■Gallium nitride (GaN) power semiconductor field effect transistors (FET) pose difficult design and test challenges due to its higher frequency operation and multiple variations of technology. This article discusses how to overcome GaN FET dynamic characterization challenges.
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Gallium nitride (GaN) power semiconductor field effect transistors 、 FET 、 GaN Systems 、 software 、 Dynamic Power Device Analyzer/Double Pulse Tester |
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Technical Documentation |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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October 9, 2020 |
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7120-1273.EN |
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1.6 MB |
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