SL2308 60V N-Channel Enhancement Mode MOSFET
■The SL2308 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.
●FEATURE
■60V/1.8 A, RDS(ON)=135mΩ (typ.) @VGS=10V
■60V/1.5 A, RDS(ON)=154mΩ (typ.) @VGS=4.5V
■Super high design for extremely low RDS(ON)
■Exceptional on-resistance and Maximum DC cuttent capability
■This is a Full RoHS compliance
■SOT23-3 package design
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N-Channel Enhancement Mode MOSFET 、 N-Channel logic enhancement mode power field effect transistor |
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[ Note Book ][ Portable Equipment ][ Battery Powered System ] |
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Datasheet |
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Please see the document for details |
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SOT23-3;SOT-23 |
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English Chinese Chinese and English Japanese |
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2021/11/3 |
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3.3 MB |
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