EPC2044 – Enhancement Mode Power Transistor DATASHEET

PublishTime：2023-01-06

●Gallium Nitride's exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
●EPC2044 eGaN® FETs are supplied only in passivated die form with copper pillars. Die size: 2.15 x 1.25 mm
●Applications
■48 V Servers
■Lidar/Pulsed Power
■Isolated Power Supplies
■Point of Load Converters
■Class D Audio
■LED Lighting
■Low Inductance Motor Drive
●Benefits
■Higher Switching Frequency – Lower switching losses and lower drive power
■Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
■Ultra Small Footprint - Higher power density

Brand of Product：	EPC
Part#：	EPC2044 More Part#
Product Category：	Enhancement Mode Power Transistor 、 eGaN® FET More
Application：	[ 48 V Servers ][ Lidar Power ][ Pulsed Power ][ Isolated Power Supplies ][ Point of Load Converters ][ Class D Audio ][ LED Lighting ][ Low Inductance Motor Drive ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	December, 2022
Version Number：
Data Encoding：
Data Size：	1.1 MB

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