eGaN® FETs and ICs for Brushless DC (BLDC) Motors APPLICATION BRIEF
2023-08-03
●Key Features
■1/5 the size of silicon MOSFETs for the same RDS(on)
■Zero reverse recovery
■Lower switching losses
■Ruggedness for short circuit stress high dV/dt and small deadtime
■Integration simplifies design
●Key Benefits
■Miniaturization & low weight
■Higher battery efficiency
■Higher precision
■Reduced EMI
■Reliability
■High Frequency operation (100 kHz+)
▲Higher position accuracy
▲Lower current & torque ripple
▲Lower audible noise
■1/5 the size of silicon MOSFETs for the same RDS(on)
■Zero reverse recovery
■Lower switching losses
■Ruggedness for short circuit stress high dV/dt and small deadtime
■Integration simplifies design
●Key Benefits
■Miniaturization & low weight
■Higher battery efficiency
■Higher precision
■Reduced EMI
■Reliability
■High Frequency operation (100 kHz+)
▲Higher position accuracy
▲Lower current & torque ripple
▲Lower audible noise
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