AP2012 N-Channel Power MOSFET
■The AP2012 uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
●General Features
■VDS=20V,lD=12A
◆RDS(ON)11mΩ VGS=4.5V
◆RDS(ON)14mΩ VGS=2.5V
■High power and current handing capability
■Lead free product is acquired
■Surface mount package
|
[ Uni-directional load switch ][ Bi-directional load switch ] |
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
TSSOP-8 |
|
|
English Chinese Chinese and English Japanese |
|
|
2022/9/14 |
|
|
V1.1 |
|
|
|
|
|
962 KB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
