SFS0407T4 N AND P-CHANNEL POWER MOSFET
■ The SFS0407T4 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
●FEATURES
■N-CHANNEL
◆VDS=40V,ID=7A
◆RDS(ON)=20.0mΩ(TYP@VGS=10V)
◆RDS(ON)=24.0mΩ(TYP@VGS=4.5V)
■P-CHANNEL
◆VDS=-40V,ID=-7A
◆RDS(ON)=30.0mΩ(TYP@VGS=-10V)
◆RDS(ON)=37.0mΩ(TYP@VGS=-4.5V)
■High density cell design for ultra low RDS(ON)
■Special process technology for high ESD capability
■Exceptional on-resistance and maximum DC Current capability
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Datasheet |
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Please see the document for details |
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SOP8-8L |
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English Chinese Chinese and English Japanese |
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2021/8/20 |
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Rev 1.1 |
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1 MB |
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