KNX3706A 50A,60V N-CHANNEL MOSFET
●Features
■R-DS(ON),typ=9mΩ@V-GS=10V
■100% EAS guaranteed
■Super low gate charge
■Excellent Cdv/dt effect decline
■Advanced high cell density trench technology
Datasheet |
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Please see the document for details |
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TO-252;TO-220 |
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English Chinese Chinese and English Japanese |
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Dec.2018 |
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Rev 1.0 |
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197 KB |
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