ZE018NG-Y N-Channel MOSFET

2022-09-23
■Description:
●This N-Channel MOSFET uses advanced trench technology to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
■Features:
●V-DS=60V,I-D=35A,R-DS(ON)<18mΩ@V-GS=10V
●Improved dv/dt capability
●Fast switching
●100% EAS Guaranteed
●Green Device Available.

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ZE018NG-Y

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N-Channel MOSFET

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Datasheet

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DFN3*3-8

English Chinese Chinese and English Japanese

2021/12/23

2.3 MB

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