2DMB51008CC Gate Driver Datasheet
■Gate driver 2DMBxxxxxCC is a dual channel gate driver designed for IGBT and SiC MOSFET. The high breakdown voltage and low parasitic capacitance make it suitable for gate drives such as SiC MOSFET and IGBT.
●Features
■Ideal for drive of IGBT and SiC MOSFET
■Gate voltage : +15V/-10V
■ALL-IN-ONE (Built-in isolated DC / DC converter and gate drive circuit)
■Low parasitic capacitance (about 12pF) ; highly resistant to common-mode noise.
■Fast response : about 100nsec(typ)
■The gate drive circuit used a isolator.
■Input-to-Output dielectric withstand voltage : AC5000V
■Output CH1-to-Ouput CH2 dielectric withstand voltage : AC4000V
■Input-to-Output insulation distance : 14mm (clearance・creepage）
■Output CH1-to-Output CH2 insulation distance : 7mm (clearance), 12mm(creepage）
■DC/DC converter input voltage :13～28V・Signal input voltage : 3.3V,5V・Overload protection (DC/DC converter)
■Overheat protection (DC/DC converter)
■Half bridge mode (Gate drive circuit)
■Desaturation protection (Gate drive circuit)
■Soft turn-off function (Gate drive circuit)
■Fault signal output function (Gate drive circuit)
■Miller clamp function (Gate drive circuit)
■Under-voltage lockout(UVLO) (Gate drive circuit)
■Safety satndards : UL508 (certification pending)
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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Dec, 2019 |
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Rev.0.04 |
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TMRDM0028EN |
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1.4 MB |
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